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high-resolution nanotransfer printing applicable to diverse surfaces via interface-targeted adhesion switching - heat transfer printing film

by:Cailong     2019-07-18
high-resolution nanotransfer printing applicable to diverse surfaces via interface-targeted adhesion switching  -  heat transfer printing film
Nano-transfer printing technology provides excellent simplicity and throughput in the manufacture of transistors, supermaterials, skin sensors and other emerging devices.
Nevertheless, a large developmentarea sub-
The 50 nm nano transfer printing process is hindered by the problem of high reliability of replication
Resolution templates and the release of the resulting nano-structures.
We showed a solvent here.
Auxiliary nano transfer printing technology based on high-tech
Fidelity replication of children
Use double-
Functional double-layer polymer film.
In order to release the nano structure evenly and quickly on different receiver surfaces and interfaces
Specific adhesion control is achieved by using polydme gel pad as a solvent
The emission transfer medium, even on biological surfaces such as human skin and Peel, provides unusual printing power.
Based on this principle, we have also shown that
Non-density metal nanoparticles
Destructive and fast surface
Enhanced Raman Spectroscopy and hydrogen detection sensors with excellent response capabilities.
Si slot master dies with a width of 200nm and 2 μm were made using KrF photoprinting and reactive ion etching.
Positive glue (
PR, East Jin Semichem Co. Ltd. )
Spin with thickness of 400nm-
Coated on a 200mm Si wafer.
Then expose the PR film using the KrF scanner (Nikon, NSR-S203B)
And then use the developer solution to develop (
Dongjin half-side Company four ammonium hydroxide. Ltd. ).
The PR pattern is used as an etching mask to pattern the Si surface by reaction ion etching (
Gas: CF, working pressure: 7 mmtorr, plasma power: 250 w). SD16 (MW=16u2009kgu2009mol)and SD45 (MW=45. 5u2009kgu2009mol)PS--
Silicone rubber BCPs forming 8-nm-wide and 15-nm-
Purchased wide lines from aggregate source companies respectively
In no purification of situation under"
SD16 BCP is dissolved in a mixed solvent of toluene, n-gengane and PGMEA (Volume 1: 1: 1), yielding a 0. 8-
Wt % polymer solution. Surface-
Patterned Si substrates with a width of 1 μm, a depth of 40 nm, and a period of 1.
Use 25 μm as a guide template.
Silicone rubber brush treatment for substrate (
5 kg/kg mol, the source company of the polymer. )
Use a vacuum oven at 15 °c.
One solution for SD16 is rotation-
Cast onto the template and use a vacuum oven for heat annealing for 30 min at 200 °c.
Similarly, the SD45 is dissolved in a mixed solvent of toluene, n-gengane, and PGMEA (Volume 1: 1: 1), yielding a 1. 0-
Rotating wt % polymer solution
Cast on the template, annealing in the chamber at room temperature using toluene vapor for 6 u2009 h.
To remove the top-
Isolation layer and organic block (PS)
, Etching samples with CF plasma (
Etching time = 20 m/s, gas flow rate = 30 s. c. c. m.
, Working pressure = 15 mmtorr, plasma source power = 50 w)
Followed by O plasma (
Etching time = 30 m/s, gas flow rate = 30 s. c. c. m.
, Working pressure = 15 mmtorr and plasma source power = 60 w).
Before copying, the surface of the main mold was treated (
Aggregate source company). P4VP (MW=60u2009kgu2009mol)and PS (MW=35u2009kgu2009mol)
It was purchased from Sigma Aldrich.
They are dissolved in acetone (IPA)
The solution of 2wt wt % was produced with toluene.
P4VP and PS films spin in sequence-
Cast on the main mold at 4,000 RPM.
A polyimide membrane (3M Inc. )
It is then attached to the surface of a double-layer polymer replica.
By taking back the adhesive film from the mold, a replica with an inverted image of the surface topography of the template is separated from the mold.
Various metal nanoparticles are formed by scanning.
Use e-to deposit material corners onto polymer replicantsBeam evaporator.
Depending on the pattern size and the template depth, the deposition angle from the normal of the substrate surface is modulated and optimized between 60 ° and 80 °.
Premix and curing agent (
Sylgard 184 Dow Corning. Ltd. )
Mix with a 10:1 weight ratio to eliminate the bubbles generated in the mixture by vacuum degassing.
Then pour the mixture onto the silicon wafer and bake for 30 minutes using a convection oven at 40 °c.
The prepared silicone rubber sample with a thickness of 15mm is immersed in the toluene Bath to prepare the gel pad.
Remove the fully expanded silicone rubber pad from the solvent bath, and by gently blowing 10 s under nitrogen, the solvent drop on the pad is immediately eliminated. The solvent-
Contract with nano structure/P4VP/PS/PI adhesive film.
After 30 m/s, the PI adhesive film is removed from the silicone rubber liner, and the polymer film and the prepared nano-structure are transferred to the surface of the liner.
Dissolve the polymer replica by immersing it in a solvent bath in sequence (
(Toluene and ethanol, respectively).
Contact with various receiver substrates and apply gentle pressure (
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